STL24N60M2 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STL24N60M2
STMicroelectronics
'STL24N60M2' PDF : 16 Pages View PDF
STL24N60M2
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VGS
ID(1)
ID(1)
IDM(1)(2)
PTOT(1)
dv/dt(3)
dv/dt(4)
Tstg
Tj
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
± 25
18
12
72
125
15
50
-55 to 150
V
A
A
A
W
V/ns
V/ns
°C
Notes:
(1)the value is limited by package
(2)Pulse width limited by safe operating area.
(3)ISD ≤ 18 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V.
(4)VDS ≤ 480 V
Symbol
Rthj-case
Rthj-pcb(1)
Table 3: Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Notes:
(1)When mounted on FR-4 board of inch², 2oz Cu.
Value
1
45
Unit
°C/W
°C/W
Table 4: Avalanche characteristics
Symbol
Parameter
IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V)
Value Unit
3.5 A
180 mJ
DocID024777 Rev 3
3/15
Share Link: 