STL31N65M5 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STL31N65M5
STMicroelectronics
'STL31N65M5' PDF : 17 Pages View PDF
STL31N65M5
Electrical characteristics
Symbol
Parameter
td (v)
tr (v)
tf (i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Table 6. Switching times
Test conditions
VDD = 400 V, ID = 14 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 20)
Min. Typ. Max. Unit
- 46 - ns
-
8
- ns
- 8.5 - ns
- 11 - ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD (1) Source-drain current
-
ISDM (1),(2) Source-drain current (pulsed)
-
VSD (3) Forward on voltage
ISD = 15 A, VGS = 0
-
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
-
ISD = 15 A, di/dt= 100 A/µs
-
VDD = 100 V (see Figure 17)
-
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 15 A, di/dt= 100 A/µs
-
VDD = 100 V, Tj = 150 °C
-
(see Figure 17)
-
1. The value is rated according to Rthj-case and limited by package.
2. Pulse width limited by safe operating area
3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
15 A
60 A
1.5 V
290
ns
4
µC
27
A
340
ns
5
µC
29
A
DocID025459 Rev 1
5/17
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