STM32L152CCT7 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STM32L152CCT7

Ultra-low-power 32-bit MCU ARM®-based Cortex®-M3, 256KB Flash, 32KB SRAM, 8KB EEPROM, LCD, USB, ADC, DAC

STMicroelectronics 

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STM32L151xC STM32L152xC

Electrical characteristics

Flash memory and data EEPROM

Symbol

Table 36. Flash memory and data EEPROM characteristics

Parameter

Conditions

Min Typ Max(1) Unit

VDD

Operating voltage

Read / Write / Erase

-

Programming/ erasing Erasing

tprog

time for byte / word /

double word / half-page Programming

Average current during

the whole programming /

erase operation

IDD Maximum current (peak) TA = 25 °C, VDD = 3.6 V

during the whole

programming / erase

operation

1.65

-

3.6

V

-

3.28 3.94

ms

-

3.28 3.94

-

600 900 µA

-

1.5 2.5 mA

1. Guaranteed by design.

Table 37. Flash memory and data EEPROM endurance and retention

Symbol

Parameter

Conditions

Value

Min(1) Typ Max

Unit

NCYC(2)

Cycling (erase / write)

Program memory

Cycling (erase / write)

EEPROM data memory

TA = -40°C to

105 °C

tRET(2)

Data retention (program memory) after

10 kcycles at TA = 85 °C

Data retention (EEPROM data memory)

after 300 kcycles at TA = 85 °C

Data retention (program memory) after

10 kcycles at TA = 105 °C

Data retention (EEPROM data memory)

after 300 kcycles at TA = 105 °C

TRET = +85 °C

TRET = +105 °C

1. Guaranteed by characterization results.

2. Characterization is done according to JEDEC JESD22-A117.

10 -

300 -

-

kcycles

-

30 - -

30 - -

years

10 - -

10 - -

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