STM8450 View Datasheet(PDF) - Samhop Mircroelectronics
Part Name
Description
MFG CO.
'STM8450' PDF : 11 Pages View PDF
S TM8450
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
Symbol Condition
Min Typ C Max Unit
DRAIN-SOURCE DIODE CHARACTERISTICS b
Diode Forward Voltage
VSD
Notes
VGS = 0V, Is =1.7A N-Ch
VGS = 0V, Is =-1.7A P-Ch
0.8 1.2
-0.77 -1.2
V
5
a.Surface Mounted on FR4 Board,t＜10sec.
b.Pulse Test:Pulse Width＜300μs,Duty Cycle＜2%.
c.Guaranteed by design, not subject to production testing.
N-Channel
20
16
VGS=10,9,8,7,6,5V
12
8
VGS=4V
4
VGS=3V
0
0
1
2
3
4
5
6
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1500
1250
1000
Ciss
750
500
250
Coss
Crss
0
0
5
10 15
20
25 30
VDS, Drain-to Source Voltage (V)
Figure 3. Capacitance
25
20
15
Tj=125 C
-55 C
10
25 C
5
0
0 0.9
1.8 2.7
3.6 4.5 5.4
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
1.8
V G S =10V
ID=5A
1.4
1.0
0.8
0.4
0
-50 -25 0 25 50 75 100 125 150
Tj=( C )
T j, J unction T emperature ( C )
Figure 4. On-Resistance Variation with
Drain Current and Temperature
4
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