STM8S105S6B6CTR View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STM8S105S6B6CTR

Access line, 16 MHz STM8S 8-bit MCU, up to 32 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, UART, SPI, I²C

STMicroelectronics 

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STM8S105xx

Electrical characteristics

Symbol Parameter

Conditions

Typ

Max(1) Unit

fADC = 4 MHz

|EL|

Integral linearity error(2)

fADC = 2 MHz

0.7

1

0.6

1.5

fADC = 4 MHz

0.6

1.5

(1) Data based on characterisation results for LQFP80 device with VREF+/VREF-, not tested

in production.

(2) ADC accuracy vs. negative injection current: Injecting negative current on any of the

analog input pins should be avoided as this significantly reduces the accuracy of the

conversion being performed on another analog input. It is recommended to add a Schottky

diode (pin to ground) to standard analog pins which may potentially inject negative current.

Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in I/O port

pin characteristics does not affect the ADC accuracy.

Figure 45: ADC accuracy characteristics

1. Example of an actual transfer curve.

2. The ideal transfer curve

3. End point correlation line

ET = Total unadjusted error: maximum deviation between the actual and the ideal transfer

curves.

EO = Offset error: deviation between the first actual transition and the first ideal one.

EG = Gain error: deviation between the last ideal transition and the last actual one.

ED = Differential linearity error: maximum deviation between actual steps and the ideal

one.

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