STP30NF10 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STP30NF10

N-channel 100V - 0.038Ω - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET™ II Power MOSFET

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STB30NF10 - STP30NF10 - STP30NF10FP

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

Source-drain current

Source-drain current

(pulsed)

Forward on voltage

ISD = 30A, VGS = 0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 30A,

di/dt = 100A/µs,

VDD = 55V, Tj = 150°C

(see Figure 17)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min. Typ. Max. Unit

35

A

140 A

1.3 V

110

ns

390

nC

7.5

A

5/16

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