STP3NC70Z View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STP3NC70Z
STMicroelectronics
'STP3NC70Z' PDF : 10 Pages View PDF
STP3NC70Z
STP3NC70ZFP
N-CHANNEL 700V - 4.1Ω - 2.5A TO-220/TO-220FP
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STP3NC70Z
STP3NC70ZFP
700V
700V
< 4.7Ω
< 4.7Ω
2.5 A
2.5 A
s TYPICAL RDS(on) = 4.1Ω
s EXTREMELY HIGH dv/dt AND CAPABILITY
GATE TO - SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrat-
ing back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capa-
bility with higher ruggedness performance as re-
quested by a large variety of single-switch
applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS
Gate-source Current (DC)
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
June 2001
TO-220
3
2
1
TO-220FP
Value
Unit
STP3NC70Z STP3NC70ZFP
700
V
700
V
± 25
V
2.5
2.5 (*)
A
1.6
1.6 (*)
A
10
10
A
65
35
W
0.52
0.28
W/°C
±50
mA
1.5
KV
3
V/ns
-
2500
V
–65 to 150
°C
150
°C
(1) ISD ≤2.5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(*) Limited by Maximum Temperature allowed
1/10
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