STP4N150 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STP4N150
STMicroelectronics
'STP4N150' PDF : 16 Pages View PDF
STFV4N150 - STFW4N150
STP4N150 - STW4N150
N-channel 1500 V - 5 Ω - 4 A - PowerMESH™ Power MOSFET
TO-220 - TO-220FH - TO-247 - TO-3PF
Features
Type
STFV4N150
STFW4N150 (1)
STP4N150
STW4N150
VDSS
RDS(on) max ID
1500 V
1500 V
1500 V
1500 V
<7Ω
4A
<7Ω
4A
<7Ω
4A
<7Ω
4A
1. All data which refers solely to the TO-3PF package is
preliminary
■ 100% avalanche tested
■ Intrinsic capacitances and Qg minimized
■ High speed switching
■ Fully isolated TO-3PF and TO-220FH plastic
packages
■ Creepage distance path is 5.4 mm (typ.) for
TO-3PF
■ Creepage distance path is > 4 mm for
TO-220FH
3
2
1
TO-220
3
2
1
TO-247
3
2
1
TO-3PF
3
2
1
TO-220FH
Figure 1. Internal schematic diagram.
Application
■ Switching applications
Description
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of very high voltage
Power MOSFETs with outstanding performances.
The strengthened layout coupled with the
company’s proprietary edge termination structure,
gives the lowest RDS(on) per area, unrivalled gate
charge and switching characteristics.
Table 1. Device summary
Order codes
Marking
STFV4N150
STFW4N150
STP4N150
STW4N150
4N150
4N150
P4N150
W4N150
April 2008
Rev 6
Package
TO-220FH
TO-3PF
TO-220
TO-247
Packaging
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