STP8NK80Z View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STP8NK80Z
STMicroelectronics
'STP8NK80Z' PDF : 11 Pages View PDF
STP8NK80Z - STP8NK80ZFP - STW8NK80Z
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD = 6.2 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6.2 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 150°C
(see Figure 23)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Pulse width limited by safe operating area
6.2 A
24.8 A
1.6 V
460
ns
2990
nC
13
A
Table 8. Gate-source zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO(1) Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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