STPIC6A259M View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'STPIC6A259M' PDF : 13 Pages View PDF
STPIC6A259
DC CHARACTERISTICS (VCC=5V, TC= 25°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min.
V(BR)DSX Drain-to-Source breakdown ID = 1mA
50
Voltage
VSD Source-to-Drain Diode
Forward Voltage
IF = 350 mA (See Note 3)
IIH
High Level Input Current
VI = VCC
IIL
Low Level Input Current
VI = 0
ICC Logic Supply Current
IO = 0
IOK Output Current at Which TC = 25°C (See Note 3 and Figg. 0.6
Chopping Starts
3, 4)
I(nom) Nominal Current
VDS(on) = 0.5V
I(nom) = ID
VCC = 5V
TC=85°C
(See Note 5, 6, 7)
ID
Off-State Drain Current
VDS = 40V
TC=25°C
VDS = 40V
TC=125°C
RDS(on) Termination Resistance
ID = 350mA
(See Note 5, 6 and figg. 9,
10)
ID = 350mA
TC=25°C
TC=125°C
Typ.
0.8
0.5
0.8
350
0.1
0.2
1
1.7
Max. Unit
V
1.1
V
1
µA
-1
µA
5
mA
1.1
A
mA
1
µA
5
µA
1.5
Ω
2.5
Ω
SWITCHING CHARACTERISTICS (VCC=5V, TC= 25°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
tPHL Propagation Dealy Time, CL = 30pF ID = 350mA
High to Low Level Output (See Figg. 1, 2, 11)
from D
30
ns
tPLH Propagation Dealy Time,
Low to High Level Output
from D
125
ns
tr
Rise Time, Drain Output
60
ns
tf
Fall Time, Drain Output
30
ns
ta
Reverse Recovery Current IF = 350mA
di/dt = 20A/µs
100
ns
Rise Time
(See Note 5, 6 and Fig. 5)
trr
Reverse Recovery Time
300
ns
Note 1: All Voltage valuea are with respect to LGND and PGND
Note 2: Each power DMOS source is internally connected to GND
Note 3: Pulse duration ≤ 100ms and duty cycle ≤ 2%
Note 4: Drain Supply Voltage = 15V, starting junction temperature (TJS) = 25°C. L = 210µH and IAS = 600mA (See Fig. 6)
Note 5: Technique should limit TJ - TC to 10°C maximum
Note 6: These parameters are measured with voltage sensing contacts separate from the current-carrying contacts.
Note 7: Nominal Current is defined for a consistent comparison between devices from different sources. It is the current that produces a
voltage drop of 0.5V at TC = 85°C.
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