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STPR1020C View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
STPR1020C
ST-Microelectronics
STMicroelectronics ST-Microelectronics
'STPR1020C' PDF : 3 Pages View PDF
1 2 3
STPR1020CB(-TR)
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-c) Junction to Case Thermal Resistance
Per diode
Total
Rth (c) Coupling
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode) x Rth (per diode) + P(diode 2) x Rth (c)
Value
5
2.7
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
IR *
VF **
Tests Conditions
Reverse leakage Current
Forward Voltage drop
Tests Conditions
Tj = 25°C
VR = VRRM
Tj = 100°C
Tj = 25°C
IF = 10 A
Tj = 100°C IF = 5 A
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.7 x IF(AV) + 0.030 IF2(RMS)
Min. Typ. Max. Unit
20
µA
0.15 0.5 mA
1.25 V
0.8 0.85
RECOVERY CHARACTERISTICS
Symbol
trr
Tj = 25°C
tfr
Tj = 25°C
VFP
Tj = 25°C
Test Conditions
Min. Typ. Max. Unit
IF = 1A
VF = 30V
dIF/dt = -50 Α/ms
35
ns
IF = 1A
VFR = 1.1 x VF
tr = 10 ns
20
ns
IF = 1A
tr = 10 ns
5
V
2/3
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