STPS1545CFP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'STPS1545CFP' PDF : 8 Pages View PDF
STPS1545CT/CF/CG/CFP/CR
Fig. 6-1: Relative variation of thermal transient
impedance junction to case versus pulse duration
(per diode) (TO-220AB and D2PAK).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Fig. 6-2: Relative variation of thermal transient
impedance junction to case versus pulse duration
(per diode) (ISOWATT220AB, TO-220FPAB).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
0.2 δ = 0.2
δ = 0.1
0.0
1E-3
Single pulse
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
IR(µA)
5E+4
1E+4
1E+3
1E+2
1E+1
1E+0
1E-1
05
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
VR(V)
10 15 20 25 30 35 40 45
C(pF)
1000
500
200
100
1
2
F=1MHz
Tj=25°C
VR(V)
5
10
20
50
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
100.0
10.0
Tj=125°C
Typical values
Tj=25°C
1.0
Tj=125°C
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board, copper thickness: 35µm).
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
0246
S(Cu) (cm²)
8 10 12 14 16 18 20
4/8
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