STPS15L60CB View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'STPS15L60CB' PDF : 8 Pages View PDF
Characteristics
1
Characteristics
STPS15L60C
Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise stated)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
60
V
IF(RMS) Forward rms current
10
A
IF(AV)
Average forward current, δ = 0.5, square
wave
Tc = 135 °C(1)
Per diode
Per device
7.5
15
A
IFSM
PARM
Surge non repetitive forward current
Repetitive peak avalanche power
tp = 10 ms sinusoidal
tp = 10 µs, Tj = 125 °C
75
A
265
W
Tstg
Storage temperature range
Tj
Maximum operating junction temperature(2)
-65 to +175
°C
150
°C
1. Value based on Rth(j-c) max (per diode)
2.
d----P-----t--o----t
dTj
R-----t--h-----1--j---–----a----
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistances
Symbol
Parameter
Value
Unit
Rth(j-c)
Rth(c)
Junction to case
Coupling
Per diode
Total
4
2.4
°C/W
0.7
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Symbol
Table 4. Static electrical characteristics (per diode)
Parameter
Test Conditions
Min. Typ. Max. Unit
IR (1) Reverse leakage current
VF(1) Forward voltage drop
1. Pulse test: tp = 380 µs, < 2%
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 7.5 A
IF = 12 A
IF = 15 A
200 µA
45
60 mA
0.62
0.52 0.57
0.76
V
0.62 0.68
0.82
0.66 0.72
To evaluate the conduction losses use the following equation:
P = 0.32 x IF(AV) + 0.027 IF2(RMS)
2/8
DocID8621 Rev 4
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