STPS3L60-C2 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'STPS3L60-C2' PDF : 4 Pages View PDF
STPS3L60-C2
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
Fig. 6: Relative variation of thermal impedance
junction to ambient versus pulse duration.
IM(A)
12
10
8
6
4
2 IM
t
δ=0.5
0
1E-3
1E-2
t(s)
1E-1
Ta=25°C
Ta=50°C
Ta=100°C
1E+0
Zth(j-a)/Rth(j-a)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3 δ = 0.2
0.2 δ = 0.1
0.1
0.0
1E-1
Single pulse
1E+0
tp(s)
1E+1
T
δ=tp/T
1E+2
tp
1E+3
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
IR(mA)
5E+1
1E+1
1E+0
Tj=125°C
Tj=100°C
1E-1
1E-2
1E-3
0
Tj=25°C
VR(V)
5 10 15 20 25 30 35 40 45 50 55 60
C(pF)
500
200
100
50
20
10
1
F=1MHz
Tj=25°C
VR(V)
10
100
Fig. 9-1: Forward voltage drop versus forward
current (high level, maximum values).
Fig. 9-2: Forward voltage drop versus forward
current (low level, maximum values).
IFM(A)
30
Tj=100°C
(Maximum values)
Tj=100°C
10
(Typical values)
Tj=25°C
VFM(V)
1
0.0
0.5
1.0
1.5
2.0
IFM(A)
5
4
3
2
Tj=100°C
(Typical values)
Tj=100°C
(Maximum values)
Tj=25°C
1
VFM(V)
0
2.5
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
3/4
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