STPS80L15CY View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'STPS80L15CY' PDF : 4 Pages View PDF
STPS80L15CY
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
PF(av)(W)
22
IF(av)(A)
50
20
δ = 0.2
δ = 0.1
δ = 0.5
18
δ = 0.05
16
14
12
10
8
6
δ=1
T
45
40
35
30
25
20
15
T
Rth(j-a)=Rth(j-c)
Rth(j-a)=5°C/W
4
10
2
IF(av) (A)
δ=tp/T
tp
0
0 5 10 15 20 25 30 35 40 45 50 55 60
5
δ=tp/T
tp
0
0
25
Tamb(°C)
50
75
100
125
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse (per diode).
IM(A)
600
500
400
300
200
IM
100
t
δ=0.5
0
1E-3
1E-2
Tc=25°C
Tc=50°C
t(s)
1E-1
Tc=75°C
1E+0
Zth(j-c)/Rth(j-c)
1.0
0.8
δ=0.5
0.6
0.4 δ=0.2
δ=0.1
0.2
Single pulse
0.0
1E-3
1E-2
T
tp(s)
1E-1
δ=tp/T
tp
1E+0
3/5
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