STTH803 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'STTH803' PDF : 6 Pages View PDF
STTH803D/G
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Parameter
Value
2.5
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests conditions
IR * Reverse leakage
current
VR = 300 V
Tj = 25°C
Tj = 125°C
VF ** Forward voltage drop IF = 8 A
Tj = 25°C
IF = 8 A
Tj = 125°C
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%
Min. Typ. Max. Unit
20
µA
20 200
1.25 V
0.85 1
To evaluate the maximum conduction losses use the following equation :
P = 0.75 x IF(AV) + 0.031 IF2(RMS)
RECOVERY CHARACTERISTICS
Symbol
Tests conditions
Min. Typ. Max. Unit
trr
IF = 0.5 A Irr = 0.25 A
IR = 1 A
Tj = 25°C
25
ns
IF = 1 A dIF/dt = - 50 A/µs VR = 30 V Tj = 25°C
35
tfr
IF = 8 A dIF/dt = 100 A/µs
VFP
VFR = 1.1 x VF max.
Tj = 25°C
Tj = 25°C
200 ns
3.5
V
Sfactor
IRM
Vcc = 200V
dIF/dt = 200 A/µs
IF = 8 A
Tj = 125°C
0.3
-
8
A
2/6
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