T1610T-6I View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'T1610T-6I' PDF : 9 Pages View PDF
Characteristics
T16T
Table 5. Thermal resistance
Symbol
Rth(j-c) Junction to case (AC)
Rth(j-a) Junction to ambient (DC)
Parameter
Value
2.1
60
Unit
°C/W
°C/W
Figure 1. Maximum power dissipation versus Figure 2. On-state rms current versus case
rms on-state current (full cycle)
temperature (full cycle)
20 P(W)
18 α = 180°
180°
16
14
12
10
8
6
4
2
0
IT(RMS)(A)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
IT(RMS)(A)
16
14
12
10
8
6
4
2
0
0
25
TO-220 ins.
α = 180°
TC(°C)
50
75
100
125
Figure 3. On-state rms current versus
ambient temperature
Figure 4. Relative variation of thermal
impedance versus pulse duration
3.5 IT(RMS)(A)
3.0
2.5
α = 180°
1.0E+00 K = [Zth / Rth]
Zth(j-c)
TO-220AB
Zth(j-a)
2.0
TO-220 ins.
1.5
1.0E-01
1.0
0.5
0.0
0
TO-220AB
Ta(°C)
1.0E-02
Tp(s)
25
50
75
100
125
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 5. On state characteristics
(maximum values)
1000 ITM(A)
100
10
Tj = 125 °C
Tj = 25 °C
1
VTM(V)
0
1
2
Tjmax:
Vto = 0.85 V
Rd = 25 mW
3
4
Figure 6. Surge peak on state current versus
number of cycles
ITMS(A)
120
100
Non repetitive
Tj initial = 25 °C
80
60
Repetitive
40 Tc = 86 °C
20
TO-220AB ins.
0
1
10
t = 20 ms
One cycle
Number of cycles
100
1000
4/9
Doc ID 16488 Rev 2
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