tm TE
CH
T2316405A
Preliminary T2316407A
RAS
V
V
IH
IL
CAS
V
V
IH
IL
I/O
WE VI H
V IL
CBR REFRESH CYCLE
(A0-A10; OE =DON‘T CARE )
tRP
tR AS
tR P
tR AS
tRP C
tC P N
tC S R
t CHR
tRP C
tCS R
t CHR
tWRP tWR H
OPEN
tWRP tWR H
RAS
V
V
IH
IL
CAS
V
V
IH
IL
A DDR
V
V
IH
IL
I /O
V
V
O
O
H
L
OE
V
V
IH
IL
HIDDEN REFRESH CYCLE
( WE =HIGH;OE =LOW)
(R E A D)
tRA S
tR P
(R E F RE S H)
tRA S
tC RP
tR CD
t RSH
tCH R
tA S R
tAR
t RAD
tR AH
tAS C
tR AL
tC A H
R OW
C OL U MN
tAA
tR AC
tC AC
tC L Z
OPEN
t O AC
tO RD
V A L ID D A T A
N O TE1
tO FF 1
tO F F 2
OPEN
Note: 1. tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last.
Taiwan Memory Technology, Inc. reserves the right P. 12
to change products or specifications without notice.
Publication Date: APR. 2001
Revision:0.B