T2550H-600T View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'T2550H-600T' PDF : 8 Pages View PDF
Characteristics
T2550H
Figure 7.
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
Figure 8.
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.5
2.0
IGT
1.5
IH & IL
1.0
0.5
Tj(°C)
0.0
-40 -20
0
20 40 60 80 100 120 140 160
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
1.6
1.4
1.2
1.0
0.8
0.6
0.1
(dV/dt)c (V/µs)
1.0
10.0
100.0
Figure 9.
Relative variation of critical rate of Figure 10. Leakage current versus junction
decrease of main current versus
temperature for different values of
junction temperature
blocking voltage (typical values)
(dI/dt)c [Tj] / (dI/dt)c [Tj = 150°C]
8
IDRM / IRRM (mA)
1E+1
7
6
1E+0
VD = VR = 600V
5
VD = VR = 400V
4
1E-1
VD = VR = 200V
3
2
1E-2
1
Tj(°C)
0
1E-3
25
50
75
100
125
150
50
Tj(°C)
75
100
125
150
Figure 11. Acceptable repetitive peak off-state
voltage versus case-ambient
thermal resistance
Rth(c-a)(°C/W)
10
9
8
7
6
5
4
3
2
1
0
300
350
VDRM / VRRM (V)
400
450
500
Rth(j-c)=0.8 °C/W
TJ=150 °C
550
600
4/8
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