T410H6T View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'T410H6T' PDF : 9 Pages View PDF
Characteristics
1
Characteristics
T410H
Table 2. Absolute maximum ratings
Symbol
Parameter
IT(RMS)
ITSM
I²t
dI/dt
On-state rms current (full sine wave)
Non repetitive surge peak on-state current
(full cycle, Tj initial = 25 °C)
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
VDSM/VRSM Non repetitive surge peak off-state voltage
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
F = 60 Hz
F = 50 Hz
tp = 10 ms
Tc = 141 °C
t = 16.7 ms
t = 20 ms
F = 120 Hz Tj = 150 °C
tp = 10 ms
tp = 20 µs
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Value
4
42
40
11
50
VDRM/VRRM
+ 100
4
1
- 40 to + 150
- 40 to + 150
Unit
A
A
A²s
A/µs
V
A
W
°C
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrant
Min.
IGT
VGT
VGD
IH (1)
VD = 12 V RL = 33 Ω
VD = VDRM, RL = 3.3 kΩ
IT = 100 mA
IL
IG = 1.2 IGT
dV/dt (1) VD = 67% VDRM, gate open, Tj = 150 °C
(dI/dt)c (1) Logic level, 0.1 V/µs, Tj = 150 °C
Logic level, 15 V/µs, Tj = 150 °C
1. For both polarities of A2 referenced to A1.
I - II - III
1
I - II - III
I - II - III
0.15
I - III
II
75
5.7
1.5
Max.
10
1.0
25
30
35
Unit
mA
V
V
mA
mA
V/µs
A/ms
2/9
Doc ID 15712 Rev 1
Share Link: 
