TC9491BCZM View Datasheet(PDF) - TelCom Semiconductor, Inc

Part Name

Description

MFG CO.

TC9491BCZM

LOW POWER, BANDGAP VOLTAGE REFERENCES

TelCom Semiconductor, Inc 

1 2 3

TC9491A

TC9491B

LOW POWER, BANDGAP

VOLTAGE REFERENCES

ABSOLUTE MAXIMUM RATINGS*

Forward Current .................................................... +10mA

Reverse Current .................................................... +30mA

Storage Temperature Range ................ – 65°C to +150°C

Operating Temperature Range

TO-92 Package ..................................... 0°C to +70°C

COA Surface Mount Package ............... 0°C to +70°C

Lead Temperature (Soldering, 10 sec)

TO-92 Package .............................................. +300°C

COA Surface Mount Package ........................ +300°C

Power Dissipation

Limited by Forward/Reverse Current

*Functional operation above the absolute maximum stress ratings is not

implied.

RESPONSE TIME TEST CIRCUIT

36 kΩ

INPUT

OUTPUT

TC9491

ELECTRICAL CHARACTERISTICS: TA = +25°C, unless otherwise specified.

Symbol Parameter

TC9491A

TC9491B

Test Conditions Min Typ Max Min Typ Max

V(BR)R

IRMIN

∆V(BR)R

Z

∆V(BR)/∆T

S

Reverse Breakdown Voltage

TA = 0°C to +70°C

Minimum Operating Current

TA = +25°C

TA = 0°C to +70°C

Reverse Breakdown Voltage

Change with Current

IRmin = IR = 1.0mA, TA = +25°C

TA = 0°C to +70°C

1.0mA = IR = 20mA, TA = +25°C

TA = 0°C to +70°C

Reverse Dynamic Impedance

Average Temperature Coefficient

Long Term Stability

IR ≤ 20mA

IR = 100µA

10µA = IR = 20mA

IR = 100µA,

TA = +25°C ±0.1°C

1.200 1.22 1.250 1.200

1.180 — 1.290 1.219

— 8.0 15

—

—

— 20

—

—

— 1.0

—

—

— 1.5

—

—

— 10

—

—

— 20

—

— 0.6 —

—

—

— 50

—

—

20 —

—

1.220 1.250

— 1.260

8.0

15

—

20

—

1.0

—

1.5

—

20

—

25

0.6

—

—

100

20

—

Unit

V

µA

mV

Ω

ppm/°C

ppm/kHR

3-16

TELCOM SEMICONDUCTOR, INC.

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