TGA1073C-EPU View Datasheet(PDF) - TriQuint Semiconductor
Part Name
Description
MFG CO.
'TGA1073C-EPU' PDF : 5 Pages View PDF
Advance Product Information
Electrical Characteristics
RECOMMENDED MAXIMUM RATINGS
Symbol
V+
I+
PD
PIN
TCH
TM
TSTG
Parameter
Positive Supply Voltage
Positive Supply Current
Power Dissipation
Input Continuous Wave Power
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
Value
8V
720 mA
5.76 W
23 dBm
150 °C
320 °C
-65 °C to 150 °C
Notes
3/
1/, 2/
1/ These ratings apply to each individual FET
2/ Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/ Total current for the entire MMIC
Symbol
Idss3-6
VP1-6
BV3-6
BV3-6
DC PROBE TESTS
(TA = 25 °C ± 5°C)
Parameter
Saturated Drain Current
Pinch-off Voltage
Breakdown Voltage gate-source
Breakdown Voltage gate-drain
Minimum
100
-1.5
-30
-30
Maximum
470
-0.5
-8
-8
Value
mA/mm
V
V
V
ON-WAFER RF PROBE CHARACTERISTICS
(TA = 25 °C ± 5°C)
Symbol Parameter
Test Condition
Limit
Vd=5V, LO=-5dBm Min Nom Max
Gain Small Signal F = 35 to 40 GHz
15
Gain
Step = 1 GHz
IRL
Input Return F = 35 to 40 GHz
-8
Loss
Step = 1 GHz
ORL Output Return F = 35 to 40 GHz
-6
Loss
Step = 1 GHz
PWR Output Power F = 36 to 40 GHz
24
@ P1dB
Step = 2 GHz
Units
dB
dB
dB
dBm
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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