TGA2513 View Datasheet(PDF) - TriQuint Semiconductor
Part Name
Description
MFG CO.
'TGA2513' PDF : 10 Pages View PDF
TGA2513
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
θJC Thermal Resistance
(channel to backside of
carrier)
Vd = 5 V
ID = 75 mA
Pdiss = 0.375 W
TCH
θJC
Tm
(°C) (°C/W) (HRS)
82
32
4.5 E+7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature. Worst case condition with no RF applied,
100% of DC power is dissipated.
Median Lifetime (Tm) vs. Channel Temperature
4
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