TGA4505 View Datasheet(PDF) - TriQuint Semiconductor
Part Name
Description
MFG CO.
'TGA4505' PDF : 9 Pages View PDF
TGA4505
TABLE IV
THERMAL INFORMATION
Parameter
θJC Thermal Resistance
(channel to backside of
carrier)
Test Conditions
Vd = 6V
ID = 2.05 A
Pdiss = 12.3 W
TCH
(°C)
128
θJC
Tm
(°C/W) (HRS)
4.7 7.4E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70 °C baseplate temperature. Worst case is at saturated output power
when DC power consumption rises to 23 W with 4 W RF power delivered to load.
Power dissipated is 19 W and the temperature rise in the channel is 88 °C.
Median Lifetime (Tm) vs. Channel Temperature
4
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