TGA8349 View Datasheet(PDF) - TriQuint Semiconductor
Part Name
Description
MFG CO.
'TGA8349' PDF : 7 Pages View PDF
TGA8349-SCC
RF CHARACTERISTICS
DC CHARACTERISTICS
THERMAL DATA
PARAMETER
GP
Small–signal power gain
SWR(in) Input standing wave ratio
SWR(out) Output standing wave ratio
P 1dB
Output power at 1–dB gain compression
NF
Noise figure
Output third harmonic at Pin = -2 dBm
Output second harmonic at Pin = -2 dBm
TEST CONDITIONS
f = DC to 14 GHz
f = DC to 14 GHz
f = DC to 14 GHz
f = 7 GHz
f = 7 GHz
fo = 1 GHz
fo = 3 GHz
fo = 5 GHz
fo = 1 GHz
fo = 3 GHz
fo = 5 GHz
V + = 8 V, VCTRL = 1.5 V, I+ = 80 mA TA = 25°C (unless other wise noted)
* Unit dBc applies to decibels with r espect to the car rier or fundamental fr equency, f.o
TYP
11
1.2:1
1.3:1
16
3.1
-51
-47
-48
-26
-27
-28
UNIT
dB
-
-
dBm
dB
dBc*
dBc*
PARAMETER
I DSS Total zero–gate–voltage drain current at saturation
TEST CONDITIONS
VDS = 0.5 V to 3.5 V,
V GS = 0 V
MIN
MAX
UNIT
131 395 mA
TA = 25°C
VDS for IDSS is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autopr obe.
PARAMETER
R jC Thermal resistance,
channel–to–backside
TEST CONDITIONS
FET
V+ = 8 V
V DS(FET) = 6.18 V, I D(FET) = 5 mA, channel = 79.6° C 311.4
Base = 70°C VDS(FET) = 5.08 V, I D(FET) = 8 mA, channel = 82.8° C 314.0
VDS(FET)= 4.36 V, I D(FET) =10 mA, channel = 83.8° C 315.7
MMIC UNIT
34.6
35.0 °C/W
35.2
PARAMETER
R (RES) Thermal resistance of drain
termination resistor, 37.7
TEST CONDITIONS
VRES =1.70 V, I D(MMIC) =45 mA, Base =70° C,R jC = 89.5°C/W
VRES =2.71 V, I D(MMIC) =72 mA, Base =70° C,R jC = 89.7°C/W
VRES =3.39 V, I D(MMIC) =90 mA, Base =70° C,R jC = 90.2°C/W
R (RES) UNIT
76.8 °C/W
87.5
97.5
MMIC mounted with 38 m AuSn solder to car rier.
ID (MMIC) = 9 x ID (FET).
5
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
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