TGA8399C View Datasheet(PDF) - TriQuint Semiconductor
Part Name
Description
MFG CO.
'TGA8399C' PDF : 7 Pages View PDF
TABLE I
MAXIMUM RATINGS
Product Data Sheet
August 5, 2008
TGA8399C
Symbol
V+
I+
| IG |
PIN
PD
TCH
TM
TSTG
Parameter 1/
Positive Supply Voltage
Positive Supply Current
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
Value
8V
180 mA
3.52 mA
17.0 dBm
0.94 W
150 °C
320 °C
-65 °C to 150 °C
Notes
2/
2/
2/
2/, 3/
4/, 5/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power
shall not exceed PD.
3/ When operated at this bias condition with a base plate temperature of 70 °C, the
median life is 1 E+6 hours.
4/ Junction operating temperature will directly affect the device median time to failure
(TM). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.
5/ These ratings apply to each individual FET.
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
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