TGA9092-SCC View Datasheet(PDF) - TriQuint Semiconductor
Part Name
Description
MFG CO.
'TGA9092-SCC' PDF : 10 Pages View PDF
Product Data Sheet
January 10, 2005
TABLE IV
RF WAFER CHARACTERIZATION TEST*
(TA = 25°C + 5°C)
(Vd = 8V, Id = 1.2A ±5%)
TGA9092-SCC
Parameter
Test Condition
Limit
Units
Min Nom Max
Small-signal F = 6 to 17 GHz
20 24 -
dB
Power Gain F = 18 GHz
18
Input Return F = 6 to 18 GHz
Loss
6
dB
Output Return F = 6 to 18 GHz
Loss
8
dB
Output Power F = 6 to 8 GHz
@ 2dB gain F = 9 to 18 GHz
compression
32 34.5 - dBm
32.5
-
Power Added F = 6 to 18 GHz
12 25 -
%
Efficiency
Note: RF probe data taken at 1 GHz steps
* This information is based on the per-channel device.
TABLE V
THERMAL INFORMATION*
Parameter
RθJC Thermal Resistance
(channel to backside of
carrier)
Test Conditions
Vd = 8 V
ID = 2.4 A
Pdiss = 19.2 W
TCH
(oC)
144.56
RθJC
(°C/W)
TM
(HRS)
3.88 1.6 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier
at 70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC
power is dissipated.
* This information is a result of a thermal model analysis based on the entire two-channel
device.
TriQuint Semiconductor Texas: Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com/mmw
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