TGF2022-24 View Datasheet(PDF) - TriQuint Semiconductor
Part Name
Description
MFG CO.
'TGF2022-24' PDF : 8 Pages View PDF
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Advance Product Information
September 19, 2005
TABLE III
RF CHARACTERIZATION TABLE 1/
(TA = 25 °C, Nominal)
TGF2022-24
PARAMETER
f = 10 GHz
f = 18 GHz
UNITS
Power Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
ΓL 3/, 4/
Efficiency
Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
ΓL 3/, 4/
OIP3
Vd = 10V
Idq = 180 mA
Saturated Output Power
34.9
Power Added Efficiency
52.4
Power Gain
12.9
Parallel Resistance
11.17
Parallel Capacitance
1.103
Load Reflection
coefficient
0.757 ∠ 167.4
Saturated Output Power
35.3
Power Added Efficiency
58.3
Power Gain
13
Parallel Resistance
18.12
Parallel Capacitance
1.007
Load Reflection
coefficient
Output TOI
0.737 ∠159.2
43
Vd = 12V
Vd = 10V
Vd = 12V
Idq = 180 mA Idq = 180 mA Idq = 180 mA
35.6
34.1
34.7
51.9
41.5
37.0
12.9
8.3
8.0
14.25
10.88
12.11
1.029
0.922
0.962
0.738 ∠163.5 0.828 ∠167.6 0.839 ∠166.6
35.3
33.5
56.0
46.0
13
8.5
18.56
12.82
1.020
1.100
0.741 ∠158.8 0.867 ∠166.8
42
43
34.1
42.5
8.3
16.75
1.118
0.887 ∠165.2
42
dBm
%
dB
Ω
pF
-
dBm
%
dB
Ω
pF
-
dBm
1/ Values in this table are from measurements taken from a 0.6mm unit pHEMT cell at 10 and 18 GHz
2/ Large signal equivalent pHEMT output network
3/ Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz
4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp.
The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
θJC Thermal Resistance
Vd = 12 V
(channel to backside of carrier) Idq = 180 mA
Pdiss = 2.16 W
TCH
TJC
TM
(oC) (qC/W) (HRS)
145
34.5 1.6 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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