TGF2022-48 View Datasheet(PDF) - TriQuint Semiconductor
Part Name
Description
MFG CO.
'TGF2022-48' PDF : 8 Pages View PDF
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Advance Product Information
September 19, 2005
TABLE III
RF CHARACTERIZATION TABLE 1/
(TA = 25 °C, Nominal)
TGF2022-48
PARAMETER
f = 10 GHz
f = 18 GHz
UNITS
Power Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
ΓL 3/, 4/
Efficiency
Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
ΓL 3/, 4/
OIP3
Vd = 10V
Idq = 360 mA
Saturated Output Power
37.9
Power Added Efficiency
52.4
Power Gain
12.9
Parallel Resistance
5.58
Parallel Capacitance
2.207
Load Reflection
coefficient
0.870 ∠ 173.8
Saturated Output Power
37.3
Power Added Efficiency
58.3
Power Gain
13
Parallel Resistance
9.06
Parallel Capacitance
2.014
Load Reflection
coefficient
Output TOI
0.856 ∠169.7
46
Vd = 12V
Vd = 10V
Idq = 360 mA Idq = 360 mA
38.6
37.1
51.9
41.5
12.9
8.3
7.12
5.44
2.058
1.844
0.858 ∠171.8 0.909 ∠173.8
36.5
38.3
56.0
46.0
13
8.5
9.28
6.41
2.04
2.201
0.858 ∠169.5 0.930 ∠173.4
45
46
Vd = 12V
Idq = 360 mA
37.7
37.0
8.0
6.05
1.923
0.915 ∠173.3
37.1
42.5
8.3
8.37
2.237
0.941 ∠172.6
45
dBm
%
dB
Ω
pF
-
dBm
%
dB
Ω
pF
-
dBm
1/ Values in this table are from measurements taken from a 0.6mm unit pHEMT cell at 10 and 18 GHz
2/ Large signal equivalent pHEMT output network
3/ Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz
4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp.
The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
θJC Thermal Resistance
Vd = 12 V
(channel to backside of carrier) Idq = 360 mA
Pdiss = 4.32 W
TCH
TJC
TM
(oC) (qC/W) (HRS)
145
17.3 1.6 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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