TGF4350 View Datasheet(PDF) - TriQuint Semiconductor
Part Name
Description
MFG CO.
'TGF4350' PDF : 5 Pages View PDF
Product Data Sheet
TGF4350
Electrical Characteristics
M A X IM U M R A T IN G S
Symbol
V+
I+
I-
PD
P IN
TCH
TM
T STG
Param eter
Positive Supply V oltage
Positive Supply Current
Negative Gate Current
Pow er D issipation
Input C ontinuous W ave
Power
O perating Channel
Tem perature
M ounting Tem perature (30
seconds)
Storage Tem perature
V alue
13 V
.085
A
.88
mA
1.1. W
20
dBm
150 °C
N otes
3/
1/, 2/
320 °C
-65 °C
to 150
°C
1/
These ratings apply to individual FET
2/
Junction operating tem perature w ill directly affect the
device m ean tim e to failure (M TTF). For m axim um life it
is recom m ended that junction tem peratures be m aintained
at the low est possible levels.
3/
N om inal value of Idss
Symbol
Idss
VP1-5
BVGS1
BVGD1-5
DC PROBE TESTS
(TA = 25 °C ± 5°C)
Parameter
Saturated Drain Current (info
only)
Pinch-off Voltage
Breakdown Voltage gate-source
Breakdown Voltage gate-drain
Minimum Maximum Value
30
141
mA
-1.5
-0.5
V
-30
-8
V
-30
-8
V
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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