THBT15011 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'THBT15011' PDF : 11 Pages View PDF
Characteristics
1
Characteristics
THBT15011, THBT20011, THBT27011
Table 1. Absolute maximum ratings (Tamb = 25 °C)
Symbol
Parameter
Value
Unit
IPP
Peak pulse current(1) (2)
10 / 1000 µs
30
A
ITSM
Non repetitive surge peak on-state current tp = 10 ms
(F = 50 Hz)
t=1s
8
3.5
A
Tstg
Storage temperature range
Tj
Maximum junction temperature
- 40 to + 150
°C
150
TL
Maximum lead temperature for soldering during 10s
1. For pulse waveform see Figure 2
2. See Figure 7: Test circuit 4 for IPP parameter
260
°C
Figure 2.
Pulse waveform
% I PP
10 0
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
50
0
t
tr
tp
Figure 3.
Surge peak current versus overload duration
ITSM(A)
10
9
8
7
6
5
4
3
2
1
0
1E-2
1E-1
t(s)
1E+0
1E+1
F=50Hz
Tj initial=25°C
1E+2
1E+3
Table 2. Thermal resistance
Symbol
Rth(j-a)
Junction to ambient
Parameter
Value
170
Unit
°C/W
2/11
Doc ID 3767 Rev 9
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