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THBT15011D View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
THBT15011D
ST-Microelectronics
STMicroelectronics ST-Microelectronics
'THBT15011D' PDF : 9 Pages View PDF
1 2 3 4 5 6 7 8 9
THBTxxx11D
TEST CIRCUIT 1 for IBO and VBO parameters :
Auto
Transformer
220V/2A
tp = 20ms
R1
static
140
relay.
R2
240
Vout
K
IBO
measure
D.U.T
VBO
measure
Transformer
220V/800V
5A
TEST PROCEDURE :
n Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
n VOUT Selection
- Device with VBO < 200 Volt
- VOUT = 250 VRMS, R1 = 140 .
- Device with VBO 200 Volt
- VOUT = 480 VRMS, R2 = 240 .
TEST CIRCUIT 2 for IH parameter.
R
VBAT = - 48 V
D.U.T.
- VP
Surge generator
This is a GO-NOGO test which allows to confirm the holding current (IH) level in a functional
test circuit.
TEST PROCEDURE :
n 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs.
3) The D.U.T will come back off-state within 50 ms max.
4/9
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