TIP34C View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
'TIP34C' PDF : 2 Pages View PDF
1
2
TYPES TIP34, TIP34A, TIP34B, TIP34C
P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS
electrical characteristics at 25° C case temperature
PARAMETER
Collector-Emitter
VIBRICEO Breakdovvn Voltage
'CEO
Collector Cutoff
Current
'CES
Collector Cutoff
Current
'EBO
HFE
Emitter Cutoff
Current
Static Forward
Current Transfer
Ratio
VBE
Base-Emitter
Voltage
CE(sat)
Collector-Emitter
Saturation Voltage
i1
Small-Signal
Common-E mitter
Forward Current
Transfer Ratio
Small-Signal
Common-Emitter
Forward Current
Transfer Ratio
TEST CONDITIONS
lc = -30mA.
See Note 6
VCE = -30V.
VCE = -60V,
VCE • -40 v.
VCE • -eo v,
VCE - -so v,
VCE =-100 v,
lB = 0.
IB = O
IB = O
VBE - o
VBE - o
VBE • o
VBE - o
VEB =-5V,
IC = 0
VCE»-4V,
lc = -1A,
See Notes 6 and 7
VCE=-4V,
IC = -3A.
See Notes 6 and 7
VCE --4V.
lc = -3 A,
See Notes 6 and 7
VCE*-4V> IC-IOA,
See Notes 6 and 7
I B - -0.3 A,
IC = -3A,
See Notes 6 and 7
IB = -2.5 A,
IC»-10A,
See Notes 6 and 7
VCE • -10V,
f = 1 kHz
IC =-0,5A,
VCE--10V,
f - 1 MHz
IC*-0.5A,
TIP34
TIP34A
TIP34B
TIP34C
MIN MAX MIN MAX MIN MAX MIN MAX
-40
-60
-80
-100
V
-0.7
-0.4
-0.7
-0.4
-0.7
-0.4
-0.7
mA
-0.4
-1
-1
-1
-1 rnA
40
40
40
40
20 100 20 100 20 100 20 100
-1.6
-3
-1.6
-3
-1.6
-3
-1.6
V
-3
-1
-1
•!
-1
V
-4
-4
-4
~4
20
20
20
20
3
3
3
3
NOTES; 6. These parameters must be measured using pulse techniques. tw = 300 jls, duty cycle < 2%.
7. These parameters Sre measured with voltage-sensing contacts separate from the current-carrying contacts.
thermal characteristics
R0JC
R9JA
PARAMETER
Junction-to-Case Thermal Resistance
Junction-to-Free-Air Thermal Resistance
switching characteristics at 25°C case temperature
PARAMETER
ton
Turn-On Time
toff Turn-Off Time
IC =-6A,
vBE(off)=4V,
TEST CONDITIONS*
led) * -0.6 A, IB(2) = 0.6A,
Ri_-Sn,
See Figure 1
t Voltage and current value* shown are nominal; exact value* vary slightly with translator parameter*.
MAX
1.56
35.7
UNIT
°c/w
TYP
0.4
0.7
UNIT
MS
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