TIPP32C View Datasheet(PDF) - Power Innovations
Part Name
Description
MFG CO.
'TIPP32C' PDF : 6 Pages View PDF
TIPP32, TIPP32A,TIPP32B, TIPP32C
PNP SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
TIPP32
-40
Collector-emitter
V(BR)CEO breakdown voltage
IC = -5 mA
(see Note 4)
IB = 0
TIPP32A
TIPP32B
TIPP32C
-60
-80
-100
VCE = -40 V
VBE = 0
TIPP32
-0.2
Collector-emitter
ICES cut-off current
VCE = -60 V
VCE = -80 V
VBE = 0
VBE = 0
TIPP32A
TIPP32B
-0.2
-0.2
VCE = -100 V
VBE = 0
TIPP32C
-0.2
ICEO
Collector cut-off
current
VCE = -30 V
VCE = -60 V
IB = 0
IB = 0
TIPP32/32A
TIPP32B/32C
-0.3
-0.3
Emitter cut-off
IEBO current
VEB = -5 V
IC = 0
-1
Forward current
hFE
transfer ratio
VCE = -4 V
VCE = -4 V
IC = -1 A
IC = -2 A
20
(see Notes 4 and 5)
10
Collector-emitter
VCE(sat) saturation voltage
IB = -375 mA
IC = -2 A
(see Notes 4 and 5)
-1
Base-emitter
VBE
voltage
VCE = -4 V
IC = -2 A
(see Notes 4 and 5)
-1.5
Small signal forward
hfe
current transfer ratio VCE = -10 V
IC = -0.5 A
f = 1 kHz
20
|hfe|
Small signal forward
current transfer ratio
VCE = -10 V
IC = -0.5 A
f = 1 MHz
3
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
PRODUCT INFORMATION
2
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