TNY263-268
Parameter
Output (cont.)
ON-State
Resistance
OFF-State Drain
Leakage Current
Breakdown
Voltage
Rise Time
Fall Time
Drain Supply
Voltage
Output EN/UV Delay
Output Disable
Setup Time
Auto-Restart
ON-Time
Auto-Restart
Duty Cycle
Symbol
R
DS(ON)
IDSS
BV
DSS
t
R
t
F
t
EN/UV
t
DST
tAR
DCAR
Conditions
SOURCE = 0 V; T = -40 to 125 °C
J
See Figure 18
(Unless Otherwise Specified)
TNY266
ID = 35 mA
T = 25 °C
J
T = 100 °C
J
TNY267
I = 45 mA
D
TJ = 25 °C
T = 100 °C
J
TNY268
I = 55 mA
D
T = 25 °C
J
T = 100 °C
J
VBP = 6.2 V,
VEN/UV = 0 V,
VDS = 560 V,
TJ = 125 °C
TNY263-266
TNY267-268
V = 6.2 V, V = 0 V,
BP
EN/UV
See Note H, T = 25 °C
J
Measured in a Typical Flyback
Converter Application
See Figure 20
T = 25 °C
J
See Note I
Min
Typ
Max Units
14
16
21
24
7.8
9.0
Ω
11.7
13.5
5.2
6.0
7.8
9.0
50
μA
100
700
V
50
ns
50
ns
50
V
10
μs
0.5
μs
50
ms
5.6
%
NOTES:
A. Total current consumption is the sum of I and I when EN/UV pin is shorted to ground (MOSFET not switching) and the sum of
S1
DSS
I and I when EN/UV pin is open (MOSFET switching).
S2
DSS
B. Since the output MOSFET is switching, it is difficult to isolate the switching current from the supply current at the
DRAIN. An alternative is to measure the BYPASS pin current at 6.1 V.
C. BYPASS pin is not intended for sourcing supply current to external circuitry.
D. See Typical Performance Characteristics section for BYPASS pin start-up charging waveform.
E. For current limit at other di/dt values, refer to Figure 25.
F. This parameter is derived from characterization.
G. This parameter is derived from the change in current limit measured at 1X and 4X of the di/dt shown in the I specification.
LIMIT
H. Breakdown voltage may be checked against minimum BVDSS specification by ramping the DRAIN pin voltage up to but not
exceeding minimum BVDSS.
I. Auto-restart on time has the same temperature characteristics as the oscillator (inversely proportional to frequency).
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Rev. H 02/09