TPA100 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
'TPA100' PDF : 4 Pages View PDF
Figures. On-state voltage versus on-state
current (typical value*)
Figure 4.
Relative variation of holding
current versus junction
temperature
08
0.6
0,0 L
0
1
2
3
4
S
6
7
8
9
1
0
•40
-SO
;Tirofc:
20
40
60
80
100
120
Figure S.
Relative variation of breakover
voltage versus junction
temperature
Figure 6.
Relative variation of leakage
current versus reverse voltage
applied (typical value*)
2000
1000
-40
X
T|fC)
ZI106080100
Figure 7.
Variation of thermal impedance Figure 8.
junction to ambient versus pulse
duration (Printed circuit board FR4,
SQ, = 35 urn, recommended pad
layout)
Relative variation of junction
capacitance versus reverse voltage
applied (typical values)
C(VR]/C(Vw=50V]
It a
1E-2
1E-1
1E«0
tt.l
10
jo
w 100
at»
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