TPDV1025 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'TPDV1025' PDF : 5 Pages View PDF
TPDV 625 ---> 1225
THERMAL RESISTANCES
Symbol
Rth (j-a) Contact to ambient
Parameter
Rth (j-c) DC Junction to case for DC
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz)
Value
50
1.5
1.1
Unit
°C/W
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 40W (tp = 20 µs) IGM = 8A (tp = 20 µs) VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
IGT
VGT
VGD
tgt
IL
VD=12V (DC) RL=33Ω
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
VD=VDRM IG = 500mA
dIG/dt = 3A/µs
IG=1.2 IGT
IH *
VTM *
IDRM
IRRM
IT= 500mA gate open
ITM= 35A tp= 380µs
VDRM Rated
VRRM Rated
dV/dt * Linear slope up to VD=67%VDRM
gate open
Tj=25°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
I-II-III
I-II-III
I-II-III
I-II-III
I-III
II
MAX
MAX
MIN
TYP
TYP
TYP
MAX
MAX
MAX
MIN
(dI/dt)c *
(dV/dt)c = 200V/µs
(dV/dt)c = 10V/µs
Tj=125°C
* For either polarity of electrode A2 voltage with reference to electrode A1.
MIN
Value
150
1.5
0.2
2.5
100
200
50
1.8
0.02
8
500
20
88
Unit
mA
V
V
µs
mA
mA
V
mA
V/µs
A/ms
2/5
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