TPDV1240 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'TPDV1240' PDF : 7 Pages View PDF
Characteristics
TPDVxx40
Figure 5.
Relative variation of gate trigger Figure 6.
current and holding current versus
junction temperature
Non repetitive surge peak on-state
current versus number of cycles
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.5
2
1.5
IGT
1
IH & IL
0.5
Tj(°C)
0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
ITSM(A)
350
300
250
200
150
100
50
0
1
Tj initial=25°C
tp=10ms
One cycle
Number of cycles
10
100
1000
Figure 7.
Non-repetitive surge peak on-state Figure 8.
current for a sinusoidal pulse and
corresponding values of I2t
On-state characteristics (maximum
values)
ITSM(A), I2t (A2s)
10000
Tj initial = 25°C
1000
ITSM
I2t
tp(ms)
100
1
2
5
10
ITM(A)
1000
100
Tj=max
10
Tj=25°C
1
1
2
VTM(V)
3
4
Tj max.:
Vt0=1.02V
Rd=12mΩ
5
6
Figure 9. Safe operating area below curve
(dV/dt)c(V/µs)
1000
Tj initial = 25°C
100
10
(dI/dt)c(A/ms)
1
1
100
1000
4/7
Doc ID 18270 Rev 1
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