TR2.5 SERIES
SILICON TRIACS
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
VTM
IH
IL
dv/dt
dv/dt(c)
Peak on-state voltage
Holding current
Latching current
Critical rate of rise of
off-state voltage
Critical rise of
commutation voltage
ITM = ±3.5 A
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = +12 V†
Vsupply = -12 V†
VDRM = Rated VDRM
VDRM = Rated VDRM
IG = 50 mA
IG = 0
IG = 0
(see Note 7)
IG = 0
ITRM = ±3.5 A
(see Note 6)
Init’ ITM = 100 mA
Init’ ITM = - 100 mA
TC = 110°C
TC = 85°C
±1.9
30
-30
40
-40
±50
V
mA
mA
V/µs
±2
V/µs
† All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, tp = £ 1 ms, duty cycle £ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 W , tp(g) = 20 m s, tr = £ 15 ns, f = 1 kHz.
thermal characteristics
Rq JC
Rq JA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
10 °C/W
62.5 °C/W