Qdatasheet_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

TSH690 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
TSH690
ST-Microelectronics
STMicroelectronics ST-Microelectronics
'TSH690' PDF : 14 Pages View PDF
1 2 3 4 5 6 7 8 9 10 Next
ELECTRICAL DC CHARACTERISTICS
Tamb = 25°C, VCC connected to Vbias, ZL = 50(unless otherwise specified)
Parameter
Min.
Typ.
Supply Current
Vcc = 2V
29
Vcc = 2.7V
46
Vcc = 3V
33
53
Vcc = 4V
79
Vcc = 5V
Rth-(j-a): Junction Ambient Thermal Resistance for SO-8 Package
105
140
TSH690
Max.
Unit
mA
180
°C/W
TSH690 DISSIPATION CONSIDERATIONS
In order to respect the dissipation limitation of the
package, you should consider the following equa-
tion:
Tj - Tamb = Pd Rth(j-a)
with:
Rth(j-a) = junction ambient thermal resistance
Tj (°C) = max. junction temperature (150°C)
Tamb (°C) = ambient temperature
Pd (W) = maximum dissipated power
The respect of this condition forms a safe area on
the following figure:
Figure 1 : Dissipation capability vs T ambient
900
800
V =V
BIAS
CC
R = 180°C/W
700
TH
600
500
400
SAFE
AREA
300
200
100
0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
T (°C)
AMB
If VBIAS is DC connected to VCC, the operating
temperature can be directly determined without
determining ICC, thanks to the direct reading
curve:
Figure 2 : Maximum Tamb vs VCC
160
140
120
100
80
60
40
20
0
0
V =V
BIAS CC
R =180°C/W
THmax
SAFE
AREA
1
2
3
4
5
6
V (V)
CC
In applications using a duty cycle, the average dis-
sipation is less than in continuous mode. The fol-
lowing figure gives the relation beetween the dis-
sipated power and the duty cycle.
Figure 3 : Dissipation vs Duty cycle
900
Pd = V x I x Duty Cycle
800
CC CC
700
V = 5V
CC
600
V = 4V
500
CC
400
300
V = 3V
CC
200
V = 2V
100
CC
0
0 10 20 30 40 50 60 70 80 90 100
Duty Cycle(%)
3/14
Share Link: GO URL

All Rights Reserved © qdatasheet.com  [ Privacy Policy ] [ Contact Us ]