TSL2550T View Datasheet(PDF) - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS
Part Name
Description
MFG CO.
'TSL2550T' PDF : 20 Pages View PDF
TSL2550
AMBIENT LIGHT SENSOR
WITH SMBus INTERFACE
TAOS029L − OCTOBER 2007
Electrical Characteristics over recommended operating free-air temperature range (unless
otherwise noted)
PARAMETER
VOL SMBus output low voltage
IDD Supply current
IIH
High level input current
IIL
Low level input current
TEST CONDITIONS
IO = 50 μA
IO = 4 mA
Active, VSMBCLK and VSMDATA = VDD,
VDD = 3.3 V ± 5%
Power down, VSMBCLK and VSMDATA =
VDD, VDD = 3.3 V ± 5%
VI = VDD
VI = 0
MIN TYP MAX UNIT
0.01
V
0.4
0.35 0.6 mA
10 μA
5 μA
−5 μA
Operating Characteristics, VDD = 3.3 V, TA = 255C (unless otherwise noted) (see Notes 2, 3, 4)
PARAMETER
TEST CONDITIONS
CHANNEL MIN TYP MAX UNIT
Ee = 0
Ch0
1
Ch1
1
ADC count value, standard mode
λp = 640 nm
Ee = 72 μW/cm2
Ch0
639 799 959
counts
Ch1
85
λp = 940 nm
Ee = 140 μW/cm2
Ch0
511 799 1039
Ch1
703
Ee = 0
Ch0
1
Ch1
1
ADC count value, extended mode
λp = 640 nm
Ee = 72 μW/cm2
Ch0
155
counts
Ch1
16
ADC count value ratio: Ch1/Ch0,
standard mode
Re Irradiance responsivity, standard mode
λp = 940 nm
Ee = 140 μW/cm2
λp = 640 nm, Ee = 72 μW/cm2
λp = 940 nm, Ee = 140 μW/cm2
λp = 640 nm
Ee = 72 μW/cm2
λp = 940 nm
Ee = 140 μW/cm2
Ch0
155
Ch1
139
0.070 0.106 0.175
0.70 0.88 1.20
Ch0
11.1
Ch1
1.2
counts/
(μW/
Ch0
5.7
cm2)
Ch1
5
Rv Illuminance responsivity, standard mode
Ch0
Fluorescent light source: 300 Lux
Ch1
Ch0
Incandescent light source: 50 Lux
Ch1
2.8
0.23
counts/
19
lux
13
(Sensor Lux) / (actual Lux), standard mode
(Note 5)
Fluorescent light source: 300 Lux
Incandescent light source: 50 Lux
0.65
1 1.35
0.5
1 1.5
NOTES: 3. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Visible 640 nm LEDs
and infrared 940 nm LEDs are used for final product testing for compatibility with high volume production.
4. The 640 nm irradiance Ee is supplied by an AlInGaP light-emitting diode with the following characteristics: peak wavelength
λp = 640 nm and spectral halfwidth Δλ½ = 17 nm.
5. The 940 nm irradiance Ee is supplied by a GaAs light-emitting diode with the following characteristics: peak wavelength
λp = 940 nm and spectral halfwidth Δλ½ = 40 nm.
6. The sensor Lux is calculated using the empirical formula shown on p. 11 of this data sheet based on measured Ch0 and Ch1 ADC
count values for the light source specified. Actual Lux is obtained with a commercial luxmeter. The range of the (sensor Lux) / (actual
Lux) ratio is estimated based on the variation of the 640 nm and 940 nm optical parameters. Devices are not 100% tested with
fluorescent or incandescent light sources.
The LUMENOLOGY r Company
r
Copyright E 2007, TAOS Inc.
r
www.taosinc.com
3
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