UT52L1616MC-7 View Datasheet(PDF) - Utron Technology Inc
Part Name
Description
MFG CO.
'UT52L1616MC-7' PDF : 36 Pages View PDF
UTRON
Preliminary Rev. 0.91
UT52L1616
1M X 16 BIT SDRAM
Row Activate (ACT)
This command is used to select a row in a specified bank of the device. Read and write operation can
only be initiated on this activated bank after the minimum tRCD time has elapsed from the activate
command.
Read Bank (READ)
This command is issued after the row activate command to initiate the burst read of data. The read command is
initiated by activating CE , CAS and deasserting WE at the same clock sampling (rising) edge as described in
the command truth table. The length of the burst and the CAS latency time will be determined by the values
programmed during the MRS command.
Write Bank (WRIT)
This command is used after the row activate command to initiate the burst write of data. The write command is
initiated by activating CE , CAS and WE at the same clock sampling (rising) edge as described in the
command truth table. The length of the burst will be determined by the values programmed during the MRS
command.
Functionality of SDRAM device:
The following operations are supported by SDRAM:
Burst Read
Burst Write
Multi bank Ping-Pong access
Burst Read with Autoprecharge
Burst Write with Autoprecharge
Burst Read terminated with precharge
Burst Write terminated with precharge
Burst Read terminated with another Burst Read/Write
Burst Write terminated with another Burst Write/Read
DQM masking
Fastest command to command delay of 1 clock
Precharge All command
Auto Refresh
CL=2,3
Burst Length 1,2,4, 8 and full page (256)
Self Refresh Command
Power down
Terminating a read burst
Terminating a write burst
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
12
P90004
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