UTV020 View Datasheet(PDF) - GHz Technology
Part Name
Description
MFG CO.
'UTV020' PDF : 2 Pages View PDF
1
2
UTV020
2 Watts, 25 Volts, Class A
UHF Television - Band IV & V
GENERAL DESCRIPTION
The UTV 020 is a COMMON EMITTER transistor capable of providing 2
Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. Gold
Metalization and Diffused Ballasting are used to provide high reliability and
supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
17 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVceo Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
45 Volts
25 Volts
4.0 Volts
1.2 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 150oC
+ 200oC
CASE OUTLINE
55FT, STYLE 2
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
IMD1
VSWR1
Power Out - Pk Sync
Power Input
Power Gain
Intermodulation Distortion
Load Mismatch Tolerance
F = 470 - 860 MHz
Vcc = 25 Volts
Ic = 410 mA
Pref = 2.0 Watts
F = 860 MHz
2.0
Watts
0.2 Watts
12
dB
-60
dB
30:1
LVceo
Collector to Emitter Breakdown Ic = 40 mA
26
Volts
BVces
Collector to Base Breakdown Ic = 10 mA
45
Volts
BVebo Emitter to Base Breakdown
Ie = 1 mA
4.0
Volts
hFE
Current Gain
Vce = 5 V, 250mA
10
Cob
Output Capacitance
Vcb = 20 V, F = 1 MHz
8.0
pF
θjc
Thermal Resistance
Tc = 25oC
10
oC/W
Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 Mhz
European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB
Initial Issue June, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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