VG36128401A View Datasheet(PDF) - Vanguard International Semiconductor
Part Name
Description
MFG CO.
'VG36128401A' PDF : 69 Pages View PDF
VIS
Preliminary
VG36128401A
VG36128801A
VG36128161A
CMOS Synchronous Dynamic RAM
Absolute Maximum D.C. Ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.5 to + 4.6
V
Supply voltage relative to Vss
VDD, VDDQ
-0.5 to + 4.6
V
Short circuit output current
IOUT
50
mA
Power dissipation
PD
1.0
W
Operating temperature
TOPT
0 to + 70
¢ J
Storage temperature
TSTG
-55 to + 125
¢ J
Caution: Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent
damage. The device is not meant to be operated under conditions outside the limits described in the
operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended
periods may affect device reliability.
Maximum A.C. Operating Requirements for LVTTL Compatible
Parameter
Symbol
Min
Input High Voltage
VIH
2.0
Input Low Voltage
VIL
-0.3
Max
Unit
VDD + 0.3
V
0.8
V
Notes
1
2
Note: 1. Overshoot limit: VIH(max)=VDDQ +2.0V with a pulse with < 3ns
2. Undershoot limit: VIL(min)=VSSQ -2.0V with a pulse with < 3ns and -1.5v with a pulse < 5ns
Recommended DC Operating Conditions for LVTTL Compatible
Parameter
Symbol
Min
Supply Voltage
VDD, VDDQ
3.0
Input High Voltage, all inputs
VIH
2.0
Input Low Voltage, all inputs
VIL
-0.3
Typ
Max
Unit
3.3
3.6
V
¡ Ð
VDD + 0.3
V
¡ Ð
0.8
V
Capacitance
(Ta=25°C, f = 1MHZ)
Parameter
Symbol
Min
Max
Input capacitance (CLK)
C11
2.5
4
Input capacitance (all input pins except data
C12
pins.)
2.5
5
Data input/output capacitance
CI/O
4.0
6.5
Notes : 1. Capacitance measured with effective capacitance measuring method.
Unit
Notes
pF
1
pF
1
pF
1
Document : 1G5-0154
Rev.1
Page 4
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