VNH2SP30 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'VNH2SP30' PDF : 35 Pages View PDF
VNH2SP30-E
Electrical specifications
Table 12. Truth table in normal operating conditions
INA INB DIAGA/ENA DIAGB/ENB OUTA OUTB
CS
Operating mode
1
1
0
1
1
0
0
H
H High Imp.
Brake to VCC
L
Clockwise (CW)
1
H
ISENSE = IOUT/K Counterclockwise (CCW)
L
L High imp.
Brake to GND
Note:
Table 13. Truth table in fault conditions (detected on OUTA)
INA
INB
DIAGA/ENA DIAGB/ENB
OUTA
OUTB
CS
1
1
0
1
0
0
0
X
H
High Imp.
L
1
H
IOUTB/K
OPEN
L
High Imp.
0
OPEN
X
1
1
0
H
IOUTB/K
L
High Imp.
Fault Information
Protection Action
The saturation detection on the low side power MOSFET is possible only if the impedance
of the short-circuit from the output to the battery is less than 100 mΩ when the device is
supplied with a battery voltage of 13.5 V.
DocID10832 Rev 10
15/35
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