VNS3NV04D-E View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'VNS3NV04D-E' PDF : 21 Pages View PDF
Electrical specifications
VNS3NV04D-E
Electrical characteristics (continued) (Tj=25°C, unless otherwise specified)
Table 6.
Symbol
Dynamic
Parameter
gfs (1)
COSS
Forward
transconductance
Output capacitance
Test conditions
VDD=13V; ID=1.5A
VDS=13V; f=1MHz; VIN=0V
Min Typ Max Unit
5.0
S
150
pF
Table 7. Switching
Symbol
Parameter
Test conditions
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-on delay time
Rise Time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
(dI/dt)on Turn-on current slope
Qi Total input charge
VDD=15V; ID=1.5A
Vgen=5V; Rgen=RIN MIN=220Ω
(see Figure 4)
VDD=15V; ID=1.5A
Vgen=5V; Rgen=2.2 KΩ
(see Figure 4)
VDD=15V; ID=1.5A
Vgen=5V; Rgen=RIN MIN=220Ω
VDD=12V; ID=1.5A; VIN=5V
Igen=2.13mA (see Figure 7)
Min Typ Max Unit
90 300 ns
250 750 ns
450 1350 ns
250 750 ns
0.45 1.35 µs
2.5 7.5 µs
3.3 10.0 µs
2.0 6.0 µs
4.7
A/µs
8.5
nC
Table 8. Source Drain diode
Symbol
Parameter
Test Conditions
VSD(1)
trr
Qrr
IRRM
Forward On voltage ISD=1.5A; VIN=0V
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
ISD=1.5A; dI/dt=12A/µs
VDD=30V; L=200µH
(see Figure 5)
1. Pulsed: Pulse duration = 300µs, duty cycle 1.5%
Min Typ Max Unit
0.8
V
107
ns
37
µC
0.7
A
8/21
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