03N06C Datasheet PDF - Harris Semiconductor

Description
The RLD03N06CLE, RLD03N06CLESM and RLP03N06CLE are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener diodes and a power MOS transistor. The current limiting of these devices allow it to be used safely in circuits where a shorted load condition may be encountered. The drain-source voltage clamping offers precision control of the circuit voltage when switching inductive loads. The “Logic Level” gate allows this device to be fully biased on with only 5.0V from gate to source, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.

FEATUREs
• 0.30A, 60V
• rDS(ON)= 6.0Ω
• Built in Current Limit ILIMIT 0.140 to 0.210A at 150°C
• Built in Voltage Clamp
• Temperature CompensatingPSPICE Model
• 2kV ESD Protected
• Controlled Switching Limits EMI and RFI