105N3LL Datasheet PDF - STMicroelectronics

Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

FEATUREs
• RDS(on) * Qg industry benchmark
• Extremely low on-resistance RDS(on)
• High avalanche ruggedness
• Low gate drive power losses

APPLICATIONs
• Switching applications