13009H(2007) Datasheet PDF - STMicroelectronics

Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Hollow emitter structure to enhance switching speeds.

FEATUREs
■ Low spread of dynamic parameters
■ High voltage capability
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed

APPLICATIONs
■ Switch mode power supplies