13NM60N(2011) Datasheet PDF - STMicroelectronics

Description
This device is a N-channel Power MOSFETs made using the second generation of MDmesh™ technology. This revolutionary transistor associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

APPLICATION
   Switching applications